北京特博萬德科技有限公司專業(yè)生產(chǎn)定制高質(zhì)量砷化鎵襯底片GaAs wafer、多晶棒。
尺寸:1 " ,2" ,3",4",6" ;
晶向:(100),(111)和偏2°、4°、6°、10°、16°等各種偏角;
類型:N- type 摻Si, P- type 摻Zn,半絕緣Undope;
厚度:100um、120um、350um、400um、500um、600um、625um;
提供“激光領(lǐng)域” 用高質(zhì)量 超薄雙拋GaAs ;提供光學(xué)透過可用的雙拋半絕緣GaAs ;
提供高質(zhì)量低位錯的EPD<500、<300、<100、<50 的高質(zhì)量LD級外延用GaAs;
工藝加工:鍍增透膜、鍍金等歐姆接觸、砷化鎵電池、砷化鎵外延(PN結(jié)、LED各色外延、LD激光器)。
北京特博萬德科技有限公司專業(yè)生產(chǎn)定制高質(zhì)量砷化鎵襯底片GaAs wafer、多晶棒。
尺寸:1 " ,2" ,3",4",6" ;
晶向:(100),(111)和偏2°、4°、6°、10°、16°等各種偏角;
類型:N- type 摻Si, P- type 摻Zn,半絕緣Undope;
厚度:100um、120um、350um、400um、500um、600um、625um;
提供“激光領(lǐng)域” 用高質(zhì)量 超薄雙拋GaAs ;提供光學(xué)透過可用的雙拋半絕緣GaAs ;
提供高質(zhì)量低位錯的EPD<500、<300、<100、<50 的高質(zhì)量LD級外延用GaAs;
工藝加工:鍍增透膜、鍍金等歐姆接觸、砷化鎵電池、砷化鎵外延(PN結(jié)、LED各色外延、LD激光器)。
Parameter |
Guaranteed / Actual Values |
UOM |
Parameter |
Guaranteed / Actual Values |
UOM |
||
Growth Method: |
VGF |
|
Growth Method: |
VGF |
|
||
Conduct Type: |
S-I-N |
|
Conduct Type: |
S-I-N |
|
||
Dopant: |
Undoped |
|
Dopant: |
Undoped |
|
||
Diameter: |
50.7± 0.1 |
mm |
Diameter: |
100.0± 0.2 |
mm |
||
Orientation: |
(100)± 0.50 |
|
Orientation: |
(100)± 0.30 |
|
||
OF location/length: |
EJ [ 0-1-1]± 0.50/16±1 |
|
OF location/length: |
EJ [ 0-1-1]± 0.50/32.5±1 |
|
||
IF location/length: |
EJ [ 0-1 1 ]± 0.50/7±1 |
|
IF location/length: |
EJ [ 0-1 1 ]± 0.50/18±1 |
|
||
Resistivity: |
Min: 1.0 E8 |
Max: 2.2 E8 |
?·cm |
Resistivity: |
Min: 1.5 E8 |
Max: 2.0 E8 |
?·cm |
Mobility: |
Min: 4500 |
Max: 5482 |
cm2/v.s |
Mobility: |
Min: 4832 |
Max: 4979 |
cm2/v.s |
EPD: |
Min: 700 |
Max: 800 |
/ cm2 |
EPD: |
Min: 600 |
Max: 700 |
/ cm2 |
Thickness: |
350± 20 |
μm |
Thickness: |
625± 25 |
μm |
||
Edge Rounding: |
0.25 |
mmR |
Edge Rounding: |
0.375 |
mmR |
||
Laser Marking: |
N/A |
|
|
|
|
||
TTV/TIR: |
Max: 10 |
μm |
TTV/TIR: |
Max: 3 |
μm |
||
BOW: |
Max: 10 |
μm |
BOW: |
Max: 4 |
μm |
||
Warp: |
Max: 10 |
μm |
Warp: |
Max: 5 |
μm |
||
Partical Count: |
<50/wafer(for particle>0.3um) |
|
Partical Count: |
<100/wafer(for particle>0.3um) |
|
||
Surface Finish– front: |
Polished |
|
Surface Finish– front: |
Polished |
|
||
Surface Finish –back: |
Etched |
|
Surface Finish –back: |
Polished |
|
||
Epi-Ready: |
Yes |
|
Epi-Ready: |
Yes |
|
Parameter |
Actual Values |
UOM |
Parameter |
Guaranteed / Actual Values |
UOM |
Growth Method |
VGF |
|
Growth Method |
VGF |
|
Conduct Type |
S-C-N |
|
Conduct Type |
S-C-P |
|
Dopant |
GaAs-Si |
|
Dopant |
GaAs-Zn |
|
Diameter |
50.7± 0.1 |
mm |
Diameter |
76.2± 0.3 |
mm |
Orientation |
(100) 20 ± 0.50 off toward(011) |
|
Orientation |
(100)± 0.50 |
|
OF location/length |
EJ [ 0-1-1]± 0.50/16±1 |
|
OF location/length |
EJ [ 0-1-1]± 0.50/22±1 |
|
IF location/length |
EJ [ 0-1 1 ]± 0.50/ 7±1 |
|
IF location/length |
EJ [ 0-1 1 ]± 0.50/12±1 |
|
Ingot CC |
Min: 0.518 E Max: 1.7 E+18 |
/cm3 |
Ingot CC |
Min: 5.1 E+19 Max: 5.8 E+19 |
/cm3 |
Resistivity |
Min: 1.9 E-3 Max:6.1E-3 |
?·cm |
Resistivity |
Min: N/A |
?·cm |
Mobility |
Min: 1913 Max:2616 |
cm2/v.s |
Mobility |
Min: 71 Max: 72 |
cm2/v.s |
EPD |
Min:50 Max: 100 |
/ cm2 |
EPD |
Min: 600 Max: 800 |
/cm2 |
Thickness |
350±20 |
μm |
Thickness |
625±20 |
μm |
Edge Rounding |
0.25 |
mmR |
Edge Rounding |
0.25 |
mmR |
Laser Marking |
N/A |
|
Laser Marking |
Front side |
|
TTV |
<10 |
μm |
TTV |
< 15 |
μm |
TIR |
<10 |
μm |
TIR |
< 15 |
μm |
BOW |
<10 |
μm |
BOW |
< 15 |
μm |
Warp |
<10 |
μm |
Warp |
< 15 |
μm |
Surface Finish– front |
Polished |
|
Surface Finish– front |
Polished |
|
Surface Finish –back |
Etched |
|
Surface Finish –back |
Polished |
|
Partical Count |
<50/ wafer (for particle> 0.3μm) |
|
Partical Count |
<50/ wafer (for particle> 0.3μm2) |
|
Epi-Ready |
Yes |
|
Epi-Ready |
Yes |
|