国产成人精选视频在线观看_WWW.-级毛片线天内射视视_久久精品人成免费_亚洲综合一区国产精品_漂亮人妻洗澡被公强_国产AV丝袜旗袍无码_中文字幕无码AV波多野吉衣_老司机深夜18禁污污网站

       For 4”(100mm）, 5”（125mm）, 6”（150mm）
—— Handle wafer minimum 300um maximum 1000um
—— Buried Oxide, minimum 0.1 um, maximum 4 um
—— Device layer minimum 2 um, max 500 um.（幾十至幾百納米for6英寸）

 For 8"（200mm）
—— Handle thickness minimum 500um and maximum 675um,
—— Buried Oxide minimum 0.1 um, maximum 4 um
—— Device layer minimum 5 um, maximum 500 um（幾十至幾百納米）

2-    Si-Si direct wafer bonding (replacement for epi) 硅-硅直接鍵合，可替代外延片
      100mm, 125mm, 150mm and 200mm, thickness as specified above.

3-    Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
      Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)   and finally Through Silicon Via (TSV)   
—— Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
—— Multiple SOI 2 or 3 or more layers of SOI designed around your process
—— Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated

4-     SOI + Trench & Refill  Features
a.  Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation 
b.  Bulk quality top silicon layer 
c.  Total device-to-device isolation 
d.  Lower substrate capacitance than bulk 
e.  Fully flexible specification on SOI, Trench and refill parameters

5-   Superjunction MOSFET

Parameter Parameter

Specification Range

Wafer Diameter

100, 125, 150 mm

200 mm

Handle Layer Specifications

Handle Thickness

200–1000 μm

500-750 μm

Handle Thickness Tolerance

±5 μm

Stack Thickness

≥280 – ≤1250 μm

Dopant Type

N or P

Doping

N type: Phos, Red Phos, Sb & As
P type: Boron

Resistivity

≤0.001 – ≥10000 ?-cm

Growth Method

CZ, MCZ or FZ

Crystal Orientation

<100>, <111> or <110>

Backside Finish

Lapped/Etched or Polished

Buried Oxide Specifications

Thermally Oxidised Buried Oxide Thickness

0.2 – 5.0 μm grown on Handle, Device or both wafers

Device Layer Specifications

Device Layer Thickness

≥1.5 μm

5-300 μm

Tolerance

± 0.5 μm

±0.8 μm

Dopant Type

N or P

Doping

N type: Phos, Red Phos, Sb & As
P type: Boron

Resistivity

≤0.001 – ≥10000 ?-cm

Growth Method

CZ, MCZ or FZ

Crystal Orientation

<100>, <111> or <110>

Buried Layer Implant

N type or P type

SOI應(yīng)用優(yōu)勢(shì)

SOI高速特性

微處理器，高速通信，三維圖象處理，先進(jìn)多媒體

SOI低壓低功耗特點(diǎn)

移動(dòng)計(jì)算機(jī)，移動(dòng)電話，便攜式電子設(shè)備，射頻集成靈巧功率器件以及其它要求功耗低、散熱快的領(lǐng)域，如單芯片系統(tǒng)SOC，微小衛(wèi)星等

SOI應(yīng)用于惡劣環(huán)境

高溫器件，高壓器件，衛(wèi)星或其它空間應(yīng)用，武器控制系統(tǒng)等

SOI光通信和MEMS應(yīng)用

作為一種結(jié)構(gòu)材料，可制作硅基集成光電器件，應(yīng)用于高速寬帶互聯(lián)網(wǎng)和其它光網(wǎng)絡(luò)的接口。此外，SOI圓片還廣泛應(yīng)用于制作微機(jī)電系統(tǒng)(MEMS)器件，如傳感器